ffpf10up60s 10 a, 600 v, ultrafast diode absolute maximum ratings t c =25 c unless otherwise noted thermal characteristics electrical characteristics t c =25 c unless otherwise noted * pulse test: pulse width=300 s, duty cycle=2% symbol parameter value unit v rrm peak repetitive reverse voltage 600 v i f(av) average rectified forward current @ t c = 60 c1 0a i fsm non-repetitive peak surge current 60hz single half-sine wave 50 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter value unit r jc maximum thermal resistance, junction to case 4.5 c/w symbol parameter min. typ. max. units v f * maximum instantaneous forward voltage i f = 10 a i f = 10 a t c = 25 c t c = 100 c - - - - 2.2 2.0 v i r * maximum instantaneous reverse current @ rated v r t c = 25 c t c = 100 c - - - - 100 500 a t rr i rr q rr reverse recovery t ime reverse recovery c urrent reverse recovery charge (i f =1 a, di/dt = 100 a/s) - - - 34 1.0 17 40 1.5 30 ns a nc t rr maximum reverse recovery time (i f =10 a, di/dt = 200 a/s) -58- ns w avl avalanche energy (l = 40 mh) 20 - - mj ffpf10up60s features ? ultrafast recovery t rr = 40 ns (@ i f = 1 a) ? max forward voltage, v f = 2.2 v (@ t c = 25c) ? 600 v reverse voltage and high reliability ? avalanche energy rated ? rohs compliant applications ? general purpose ? switching mode power supply ? ? power switching circuits 1 2 to-220f-2l 1. cathode 2. anode tm march 2004 10 a, 600 v, ultrafast diode the ffpf10up60s is an ultrafast diode with low forward voltage drop and rugged uis capability. this device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications . it is specially suited for us e in switc hing power supplies and industrial applicationa as welder and ups application. free-wheeling diode for motor application www.fairchildsemi.com 1 ?2004 fairchild semiconductor corporation ffpf10up60s rev. a
ffpf10up60s 10 a, 600 v, ultrafast diode typical characteristics figure 1. typical forward voltage drop vs. forward current figure 3. typical junction capacitance figure 5. typical reverse recovery current vs. di/dt figure 2. typical reverse current vs. reverse voltage figure 4. typical reverse recovery time vs. di/dt figure 6. forward current derating curve 0.1 1 10 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 25 o c t c = 100 o c forward voltage , v f [v] forward current , i f [a] 0.1 1 10 100 1 25 50 typical capacitance at 0v = 51.4 pf capacitance , cj [pf] reverse voltage , v r [v] 100 500 0 1 2 3 4 5 6 7 8 9 10 i f = 10a t c = 25 o c reverse recovery current , i rr [a] di/dt [a/ s] 100 200 300 400 500 600 1e-3 0.01 0.1 1 10 100 1000 t c = 100 o c t c = 25 o c reverse current , i r [ a] reverse voltage , v r [v] 100 500 40 50 60 70 i f = 10a t c = 25 o c reverse recovery time , t rr [ns] di/dt [a/ s] 40 60 80 100 120 140 160 0 5 10 d c average forward current , i f(av) [a] case temperature , t c [ o c] www.fairchildsemi.com 2 ?2004 fairchild semiconductor corporation ffpf10up60s rev. a
ffpf10up60s 10 a, 600 v, ultrafast diode package dimensions dimensions in millimeters to-220f-2l 2.54 0.20 0.80 0.10 0.35 0.10 2.76 0.20 max1.47 (1.00x45) (0.70) 3.30 0.10 15.87 0.20 (1.80) (6.50) 6.68 0.20 15.80 0.20 9.75 0.30 12.00 0.20 4.70 0.20 10.16 0.20 9.40 0.20 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 www.fairchildsemi.com 3 ?2004 fairchild semiconductor corporation ff pf10up60s rev. a
www.fairchildsemi.com 4 ?2004 fairchild semiconductor corporation ffpf10up60s rev. a ffpf10up60s 10 a, 600 v, ultrafast diode
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